April 2010: Mitsubishi NX6  IGBT series ready for delivery

 After some delays MITSUBISHI has now started the mass production of their newest IGBT series in 17mm housings.
 Available are 4 different configurations basing on the same platform with a 62 x 122 mm footprint (=NX-M package):

configurations of the NX-M package (122 x 62 mm)

 State of the art chip technology guarantees the lowest switching loss and best Rth values available at the market. The
 established and proven CSTBT (carrier stored trench bipolar transistor) technology was revised by a finer trench pitch  
 pattern and a thinner wafer with 0.77 mm height. Mitsubishi could improve the trade off between Vce(sat) and Eoff  
 compared to the 5th generation chips further by optimization of the doping profile of the plugged cell IGBT:

Lineup of NX6 series:

* DXL = large package named NX-L with 122 x 122 mm base plate.

Also the characteristic of the free wheeling diode was improved, granting the best possible performance in the
target applications motor drives, photovoltaic inverters and UPS (uninterruptable power supplies).

key features are:

- Vce(sat)= 1.7 V for 1200 Volt modules and 2.2 V for 1700 Volt types
- wide SOA (safe operating area) with Vcc = 900 V for 1200 Volt modules and 1200 V for 1700 Volt types
- 10 µs short circuit capability
- excellent paralleling capabilities (due to positive temperature coefficient also at the free wheeling diodes)
- Tj max = 175°C
- solderless contacts on demand
- RoHS compliant and UL-certified

Technical data, pricing and availablity information on request. Please send an email.

Ineltron is distributor of MITSUBISHI, Powerex, Powersem (Germany) and Isahaya Electronics.
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INELTRON GmbH, Hugenottenstr. 30, 61381 Friedrichsdorf, Germany
FAX:   + 49 6172 75933      phone:  + 49 6172 59 88 09     E-Mail:  info@ineltron.de

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